parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 41 i d @ t c = 100c continuous drain current, v gs @ 10v 29 a i dm pulsed drain current 160 p d @t c = 25c power dissipation 170 p d @t c = 25c power dissipation (pcb mount)** 3.8 linear derating factor 1.1 linear derating factor (pcb mount)** 0.025 v gs gate-to-source voltage 20 v e as single pulse avalanche energy 230 mj i ar avalanche current 41 a e ar repetitive avalanche energy 17 mj dv/dt peak diode recovery dv/dt 5.5 v/ns t j, t stg junction and storage temperature range -55 to + 175 soldering temperature, for 10 seconds 300 (1.6mm from case) IRF1310S hexfet ? power mosfet pd - 9.1221 revision 0 v dss = 100v r ds(on) = 0.04 w i d = 41a advanced process technology ultra low on-resistance surface mount available in tape & reel dynamic dv/dt rating repetitive avalanche rated 175c operating temperature description fourth generation hexfets from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. the smd-220 is a surface mount power package capable of accommodating die sizes up to hex-4. it provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. the smd-220 is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0w in a typical surface mount application. absolute maximum ratings thermal resistance parameter min. typ. max. units r q jc junction-to-case ???? ???? 0.90 r q ja junction-to-ambient (pcb mount)** ???? ???? 40 c/w r q ja junction-to-ambient ???? ???? 62 ** when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994. w/c w c s m d - 2 2 0
IRF1310S notes: parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? 2.5 v t j = 25c, i s = 25a, v gs = 0v t rr reverse recovery time ??? 140 210 ns t j = 25c, i f = 25a q rr reverse recovery charge ??? 0.79 1.2 c di/dt = 100a/s t on forward turn-on time repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) v dd = 25v, starting t j = 25c, l = 3.1mh r g = 25 w , i as = 25a. (see figure 12) i sd 25a, di/dt 170a/s, v dd v (br)dss , t j 175c pulse width 300s; duty cycle 2%. source-drain ratings and characteristics electrical characteristics @ t j = 25c (unless otherwise specified) intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) ??? ??? 160 ??? ??? 41 a nh l d internal drain inductance ??? 4.5 ??? l s internal source inductance ??? 7.5 ??? i dss drain-to-source leakage current i gss ns a na parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 ??? ??? v v gs = 0v, id = 250a d v (br)dss / d t j breakdown voltage temp. coefficient ??? 0.10 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.04 w v gs = 10v, i d = 25a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 12 ??? ??? s v ds = 50v , i d = 25a ??? ??? 25 v ds = 100v , v gs = 0v ??? ??? 250 v ds = 80v , v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v q g total gate charge ??? ??? 110 i d = 25a q gs gate-to-source charge ??? ??? 18 nc v ds = 80v q gd gate-to-drain ("miller") charge ??? ??? 42 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time ??? 13 ??? v dd = 50v t r rise time ??? 77 ??? i d = 25a t d(off) turn-off delay time ??? 82 ??? r g = 9.1 w t f fall time ??? 64 ??? r d = 2.0 w, see fig. 10 between lead, 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 2500 ??? v gs = 0v c oss output capacitance ??? 630 ??? pf v ds = 25v c rss reverse transfer capacitance ??? 130 ??? ? = 1.0mhz, see fig. 5
fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature IRF1310S fig 1. typical output characteristics, t c = 25 o c fig 2. typical output characteristics, t c = 175 o c 1 1 0 1 0 0 1 0 0 0 0 . 1 1 1 0 1 0 0 4 . 5 v v g s t o p 1 5 v 1 0 v 8 . 0 v 7 . 0 v 6 . 0 v 5 . 5 v 5 . 0 v b o t t o m 4 . 5 v i , d r a i n - t o - s o u r c e c u r r e n t ( a ) d v , d r a i n - t o - s o u r c e v o l t a g e ( v ) d s 2 0 s p u l s e w i d t h t = 2 5 c c 1 1 0 1 0 0 1 0 0 0 0 . 1 1 1 0 1 0 0 4 . 5 v v g s t o p 1 5 v 1 0 v 8 . 0 v 7 . 0 v 6 . 0 v 5 . 5 v 5 . 0 v b o t t o m 4 . 5 v i , d r a i n - t o - s o u r c e c u r r e n t ( a ) d v , d r a i n - t o - s o u r c e v o l t a g e ( v ) d s 2 0 s p u l s e w i d t h t = 1 7 5 c c 1 1 0 1 0 0 1 0 0 0 4 5 6 7 8 9 1 0 g s v , g a t e - t o - s o u r c e v o l t a g e ( v ) d i , d r a i n - t o - s o u r c e c u r r e n t ( a ) t = 2 5 c j t = 1 7 5 c j v = 5 0 v 2 0 s p u l s e w i d t h ? d s 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 - 6 0 - 4 0 - 2 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0 v = 1 0 v g s j t , j u n c t i o n t e m p e r a t u r e ( c ) r , d r a i n - t o - s o u r c e o n r e s i s t a n c e d s ( o n ) ( n o r m a l i z e d ) ? i = 2 5 a d
IRF1310S fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage 0 1 0 0 0 2 0 0 0 3 0 0 0 4 0 0 0 1 1 0 1 0 0 c , c a p a c i t a n c e ( p f ) d s v , d r a i n - t o - s o u r c e v o l t a g e ( v ) v = 0 v , f = 1 m h z c = c + c , c s h o r t e d c = c c = c + c c ? i s s c ? o s s c ? r s s g s i s s g s g d d s r s s g d o s s d s g d 0 4 8 1 2 1 6 2 0 0 3 0 6 0 9 0 1 2 0 q , t o t a l g a t e c h a r g e ( n c ) g f o r t e s t c i r c u i t s e e f i g u r e 1 3 v , g a t e - t o - s o u r c e v o l t a g e ( v ) g s ? v = 8 0 v ? v = 5 0 v v = 2 0 v d s d s d s i = 2 5 a d 1 1 0 1 0 0 1 0 0 0 0 0 . 5 1 1 . 5 2 2 . 5 t = 2 5 c j v = 0 v ? g s v , s o u r c e - t o - d r a i n v o l t a g e ( v ) i , r e v e r s e d r a i n c u r r e n t ( a ) s d s d t = 1 7 5 c j 1 1 0 1 0 0 1 0 0 0 1 1 0 1 0 0 1 0 0 0 v , d r a i n - t o - s o u r c e v o l t a g e ( v ) d s i , d r a i n c u r r e n t ( a ) o p e r a t i o n i n t h i s a r e a l i m i t e d b y r d d s ( o n ) 1 0 s 1 0 0 s 1 m s 1 0 m s 1 0 0 m s ? t = 2 5 c ? t = 1 7 5 c s i n g l e p u l s e c j
IRF1310S fig 10a. switching time test circuit v ds 10 v pulse width 1 s duty factor 0.1 % fig 9. maximum drain current vs. case temperature fig 10b. switching time waveforms r d v gs v dd r g d.u.t. fig 11. maximum effective transient thermal impedance, junction-to-case 0 1 0 2 0 3 0 4 0 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5 t , c a s e t e m p e r a t u r e ( c ) c i , d r a i n c u r r e n t ( a m p s ) d 0 . 0 1 0 . 1 1 0 . 0 0 0 0 1 0 . 0 0 0 1 0 . 0 0 1 0 . 0 1 0 . 1 1 1 0 t , r e c t a n g u l a r p u l s e d u r a t i o n ( s e c ) 1 t h j c d = 0 . 5 0 0 . 0 1 0 . 0 2 0 . 0 5 0 . 1 0 0 . 2 0 s i n g l e p u l s e ( t h e r m a l r e s p o n s e ) t h e r m a l r e s p o n s e ( z ) p t 2 1 t d m n o t e s : ? 1 . d u t y f a c t o r d = t / t 2 . p e a k t = p x z + t ? ? ? ? 1 2 j d m t h j c c ? ? ?
IRF1310S fig 12c. maximum avalanche energy vs. drain current fig 12a. unclamped inductive test circuit fig 12b. unclamped inductive waveforms fig 13a. basic gate charge waveform fig 13b. gate charge test circuit 10 v 10 v 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5 v = 5 0 v j e , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) a s d d i t o p 1 0 a 1 8 a b o t t o m 2 5 a d s t a r t i n g t , j u n c t i o n t e m p e r a t u r e ( c )
IRF1310S package outline smd-220 outline
IRF1310S part marking information package outline smd-220 tape and reel world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: (44) 0883 713215 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 3l1, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: 6172 37066 ir italy: via liguria 49, 10071 borgaro, torino tel: (39) 1145 10111 ir far east: k&h bldg., 2f, 3-30-4 nishi-ikeburo 3-chome, toshima-ki, tokyo 171 tel: (03)3983 0641 ir southeast asia: 315 outram road, #10-02 tan boon liat building, 0316 tel: 65 221 8371 data and specifications subject to change without notice.
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